Poro Technologies Ltd (Porotech), the Gallium Nitride (GaN) material technology developer and spin-out from the University of Cambridge, focuses on the development of high performance and energy efficient wide-bandgap compound GaN semiconductors by applying cutting-edge material technologies and solutions to unleash the full potential of GaN to revolutionise the electronics industry.
Porotech’s unique production process allows the controlled creation of a new class of nanostructured GaN semiconductor materials providing new opportunities for device engineering. We can control the process to vary the GaN nanostructures and hence engineer a wide range of material properties, such as optical, mechanical, thermal and electrical, and consequently offering an entirely new material platform for semiconductor devices to be built upon.
GaN is the silicon of the future, as it has many more interesting properties, including energy efficiency, than any other semiconductor materials. GaN-based LEDs can save 10% of entire world’s electricity consumption. GaN-based transistors can operate 100 times faster than those in silicon whilst consuming 10 times less power.
Porotech’s unique and world leading material technologies and device solutions will deliver multifunctional GaN semiconductor wafers with material properties and functionalities tailored and targeted to high impact final device applications. GaN has enormous potential in energy efficient lighting and power management, as well as lasers, quantum light sources, sensors, and energy generation, and our new material technologies will help make that potential a reality.